Dynamic leakage current compensation in ferroelectric thin-film capacitor structures

Abstract

We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures. The ac current response is determined for two adjacent frequencies. Taking advantage of the different frequency dependencies of the ferroelectric switching current, dielectric displacement current and ohmic current, the hysteresis loop is calculated without performing a static leakage current measurement, which causes a high dc field stress to the sample. The applicability of the proposed measurement procedure is demonstrated on a $\mathrm{Pt}∕\mathrm{Pb}(\mathrm{Zr},\mathrm{Ti}){\mathrm{O}}_3∕\mathrm{Ir}{\mathrm{O}}_2$ ferroelectric capacitor revealing a high leakage current.