Guidelines for predicting single-event upsets in neutron environments (RAM devices)
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6), 1500-1506
- https://doi.org/10.1109/23.124138
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Quantitative comparison of single event upsets induced by protons and neutrons (RAM devices)IEEE Transactions on Nuclear Science, 1991
- Incorporation of ENDF-V neutron cross section data for calculating neutron-induced single event upsetsIEEE Transactions on Nuclear Science, 1989
- A comparison of neutron-induced SEU rates in Si and GaAs devicesIEEE Transactions on Nuclear Science, 1988
- Use of PuBe source to simulate neutron-induced single event upsets in static RAMsIEEE Transactions on Nuclear Science, 1988
- Measurement of SEU Thresholds and Cross Sections at Fixed Incidence AnglesIEEE Transactions on Nuclear Science, 1987
- Trends in Parts Susceptibility to Single Event Upset from Heavy IonsIEEE Transactions on Nuclear Science, 1985
- Neutron Generated Single-Event Upsets in the AtmosphereIEEE Transactions on Nuclear Science, 1984
- Effect of Cosmic Rays on Computer MemoriesScience, 1979
- Single Event Upset of Dynamic Rams by Neutrons and ProtonsIEEE Transactions on Nuclear Science, 1979