Large resistive switching and switchable photovoltaic response in ferroelectric doped BiFeO3-based thin films by chemical solution deposition
- 31 March 2015
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 3 (18), 4706-4712
- https://doi.org/10.1039/c5tc00814j
Abstract
The ferroelectric doped BiFeO3thin films exhibit large resistive switching (with ON/OFF ratios ∼104) and stably switchable photovoltaic response with good retention properties, providing multiple selections for non-destructive ferroelectric memory diveces.Keywords
Funding Information
- Program for New Century Excellent Talents in University (NCET-11-0573)
- National Natural Science Foundation of China (21322102, 21031005, 21231001, 91422301)
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