Determination of gap state density in polycrystalline silicon by field-effect conductance
- 20 October 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (16), 1025-1027
- https://doi.org/10.1063/1.97460
Abstract
We have obtained the density of states (DOS) in polycrystalline silicon from the analysis of the field-effect conductance. The DOS exhibits a U-shaped distribution with an exponential band tail. The method is very sensitive and accounts for the effect of film morphology and differences in device processing (e.g., post-hydrogenation).Keywords
This publication has 15 references indexed in Scilit:
- Exponential band tails in polycrystalline semiconductor filmsPhysical Review B, 1985
- A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon filmsIEEE Transactions on Electron Devices, 1983
- Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous SemiconductorsJapanese Journal of Applied Physics, 1982
- Grain boundary states and the characteristics of lateral polysilicon diodesSolid-State Electronics, 1982
- Analysis of field-effect-conductance measurements on amorphous semiconductorsPhilosophical Magazine Part B, 1981
- Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductorsPhilosophical Magazine Part B, 1980
- Energy distribution of trapping states in polycrystalline siliconJournal of Applied Physics, 1980
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975