Transport properties of polycrystalline silicon films
- 1 November 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (11), 5565-5570
- https://doi.org/10.1063/1.324477
Abstract
The transport properties of polycrystallinesilicon films are examined and interpreted in terms of a modified grain‐boundary trapping model. The theory has been developed on the assumption of both a δ‐shaped and a uniform energy distribution of interface states. A comparison with experiments indicates that the interface states are nearly monovalent and peaked at midgap. Their density is 3.8×1012 cm−2, in accordance with carrier‐lifetime measurements performed on CVD films.Keywords
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