300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
- 19 September 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 32 (11), 1525-1527
- https://doi.org/10.1109/led.2011.2164613
Abstract
This letter reports lattice-matched In0.17Al0.83N/GaN high-electron-mobility transistors on a SiC substrate with a record current gain cutoff frequency (fT) of 300 GHz. To suppress the short-channel effects (SCEs), an In0.15Ga0.85N back barrier is applied in an InAlN/GaN heterostructure for the first time. The GaN channel thickness is also scaled to 26 nm, which allows a good immunity to SCEs for gate lengths down to 70 nm even with a relatively thick top barrier (9.4-10.4 nm). In a 30-nm-gate-length device with an on-resistance (Ron) of 1.2 Ω · mm and an extrinsic transconductance (gm.ext) of 530 mS/mm, a peak fa of 300 GHz is achieved. An electron velocity of 1.37-1.45 × 107 cm/s is extracted by two different delay analysis methods.Keywords
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