AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
- 1 February 2008
- journal article
- Published by IOP Publishing in Applied Physics Express
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHzJapanese Journal of Applied Physics, 2006
- Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistorsJournal of Applied Physics, 2006
- AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation LayersIEEE Electron Device Letters, 2005
- Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayersApplied Physics Letters, 2005
- Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier LayersIEEE Electron Device Letters, 2005
- Microstructure of heteroepitaxial GaN revealed by x-ray diffractionJournal of Applied Physics, 2003
- Monte Carlo calculation of two-dimensional electron dynamics in GaN–AlGaN heterostructuresJournal of Applied Physics, 2002
- Application of GaN-based heterojunction FETs for advanced wireless communicationIEEE Transactions on Electron Devices, 2001
- Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN filmsApplied Physics Letters, 1996
- Novel high-yield trilayer resist process for 0.1 μm T-gate fabricationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995