4H-SIC Dmosfets for High Frequency Power Switching Applications

Publisher Website

1 January 2003

journal article
Published by Springer Science and Business Media LLC in MRS Proceedings

Vol. 764
https://doi.org/10.1557/proc-764-c2.7

Abstract

No abstract available

Keywords

This publication has 6 references indexed in Scilit:

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Materials Science Forum, 2002
Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
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An 1800 V triple implanted vertical 6H-SiC MOSFET
IEEE Transactions on Electron Devices, 1999
High-voltage accumulation-layer UMOSFET's in 4H-SiC
IEEE Electron Device Letters, 1998
Conductivity Anisotropy in Epitaxial 6H and 4H Sic
MRS Proceedings, 1994
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
IEEE Transactions on Electron Devices, 1993

Cited by 4 articles