Further Study of the U-Shaped Channel SOI-LIGBT With Enhanced Current Density for High-Voltage Monolithic ICs
- 8 February 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 63 (3), 1161-1167
- https://doi.org/10.1109/ted.2016.2520466
Abstract
A high-voltage silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT) with U-shaped channels, which are composed of parallel channels and orthogonal channels for improving the current density (J C ) and latch-up immunity, is proposed and studied intensively in this paper. By using the U-shaped channels, the electron injection from the emitter into the n-drift region is significantly enhanced, and the current density is improved. In addition, an analytical model is proposed, and it is indicated that J C can be improved as α (the angle between the parallel channel and the orthogonal channel) increases in a certain range. The hole current density distribution in the ON-state and the lattice temperature distribution in the short-circuit state of the proposed structure are also investigated. Increasing α is beneficial to alleviate the holes crowding beneath the n + emitter and suppress the temperature rise in the JFET region, which is favorable for increasing the latch-up voltage (V LP ) and short-circuit withstand time (t SC ). The experiments demonstrate that the U-shaped channel SOI-LIGBT fabricated with 0.5-μm SOI technology exhibits a high current density (J C ) of 305 A/cm 2 at V CE = 3 V and V GE = 5 V, and a low specific ON-resistance (R ON· sp ) of 0.984 Ω · mm 2 with breakdown voltage of 590 V. The improved latch-up voltage (V LP ) of 560 V and the short-circuit withstand time (t SC ) of 5.1 μs are obtained.Keywords
Funding Information
- National Natural Science Foundation of China (61504025)
- Natural Science Foundation of Jiangsu Province (BK20150627)
- Science and Technology Cooperation Program, China, Hong Kong, Macao, and Taiwan (2014DFH10190)
- Distinguished Young Scientists Foundation of Jiangsu Province (BK20130021)
- Qing Lan Project
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