Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure
- 1 June 2020
- journal article
- research article
- Published by Wiley in Advanced Electronic Materials
- Vol. 6 (6)
- https://doi.org/10.1002/aelm.202000102
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (11974042, 51731003, 51927802, 51971023, 11574027, 61674013)
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