Influence of stabilizers in ZnO nano-dispersions on the performance of solution-processed FETs
- 31 May 2010
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 207 (7), 1684-1688
- https://doi.org/10.1002/pssa.200983768
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Printable electronics: flexibility for the futurePhysica Status Solidi (a), 2009
- Influence of stabilizers in ZnO nanodispersions on field-effect transistor device performanceJournal of Applied Physics, 2009
- A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gatingNanotechnology, 2008
- Influence of interface roughness on the performance of nanoparticulate zinc oxide field-effect transistorsApplied Physics Letters, 2008
- Organic Semiconductors for Solution‐Processable Field‐Effect Transistors (OFETs)Angewandte Chemie-International Edition, 2008
- Low-Temperature Sintering of In-Plane Self-Assembled ZnO Nanorods for Solution-Processed High-Performance Thin Film TransistorsThe Journal of Physical Chemistry C, 2007
- Stable, Solution-Processed, High-Mobility ZnO Thin-Film TransistorsJournal of the American Chemical Society, 2007
- FET Fabricated by Layer-by-Layer NanoassemblyIEEE Transactions on Electron Devices, 2004
- Spin-coated zinc oxide transparent transistorsJournal of Physics D: Applied Physics, 2003
- All-Inorganic Field Effect Transistors Fabricated by PrintingScience, 1999