Influence of interface roughness on the performance of nanoparticulate zinc oxide field-effect transistors
- 25 August 2008
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (8), 083105
- https://doi.org/10.1063/1.2972121
Abstract
Nanoparticulate zinc oxide is regarded as one of the most promising inorganic materials for printable field-effect transistors(FETs), which work in the n -channel enhancement mode, due to the compatibility with solution, low-temperature, and high throughput processes. Since nanoparticulate films are composed of the nanoparticles and their agglomerates, the roughness of the interface to the insulating layer, where the channel of the FETs is formed, is a critical issue. Thus, the influence of the interface roughness on the field-effect mobility of the FETs is investigated in conjunction with film roughness and capacitance analyses. The field-effect mobility increases almost by a factor of 50, from 2.0 × 10 − 4 to 8.4 × 10 − 3 cm 2 V − 1 s − 1 , even if the reduction in the average roughness of the films is as small as 1.7 nm.Keywords
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