Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy
- 16 January 2007
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 301-302, 971-974
- https://doi.org/10.1016/j.jcrysgro.2006.11.171
Abstract
No abstract availableKeywords
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