Bound-to-extended state absorption GaAs superlattice transport infrared detectors
- 1 August 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3), 1591-1593
- https://doi.org/10.1063/1.341794
Abstract
We demonstrate an efficient 10-μm detector based on localized bound-state–to–extended-continuum-state absorption in doped GaAs/AlxGa1−xAs quantum wells designed to contain only one bound state. The voltage dependence of the responsivity is strikingly different from previous intersubband tunneling detectors containing two bound states. This results from the photoexcited electrons being transported over the top of the superlattice barriers, rather than tunneling through them.Keywords
This publication has 21 references indexed in Scilit:
- Negative differential photoconductance in an alternately doped multiple quantum well structureApplied Physics Letters, 1988
- InGaAs/InAlAs multiquantum well intersubband absorption at a wavelength of λ=4.4 μmApplied Physics Letters, 1988
- Photoexcited Coherent Tunneling in a Double-Barrier SuperlatticePhysical Review Letters, 1987
- Quantum well avalanche multiplication initiated by 10 μm intersubband absorption and photoexcited tunnelingApplied Physics Letters, 1987
- Intersubband relaxation in GaAs-As quantum well structures observed directly by an infrared bleaching techniquePhysical Review Letters, 1987
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityApplied Physics Letters, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985