Effects of AlGaN∕GaN HEMT structure on RF reliability
- 1 January 2005
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 41 (3), 155-157
- https://doi.org/10.1049/el:20057802
Abstract
A comparison of RF reliability at 10 GHz on four different undoped AlGaN/GaN HEMT structures with AlGaN barrier thickness variation is presented. The output power degradation characteristics during RF stress for each structure are shown, and the results indicate a strong dependence of reliability on AlGaN thickness. A device from the structure with the thinnest AlGaN in the study, with initial output power of 8.8 W/mm at 40 V, showed only a change of 0.55 dB in output power after 185 h of RF stress at 40 V. The results demonstrate excellent RF reliability of high-power devices and the potential of stable high-power operation of undoped AlGaN/GaN HEMTs on SiC.Keywords
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