Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrate
- 26 June 2003
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Drain resistance degradation under high fields in AlInAs/GaInAs MODFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdownIEEE Transactions on Electron Devices, 2001
- Hot electron effects on Al/sub 0.25/Ga/sub 0.75/As/GaAs power HFET's under off-state and on-state electrical stress conditionsIEEE Transactions on Electron Devices, 2000
- Evaluation of the temperature stability of AlGaN/GaN heterostructure FETsIEEE Electron Device Letters, 1999