Effect of high temperature processing of Si/SiO2/Si structures on their response to x-ray irradiation

Abstract

The radiation response of Si/SiO₂/ Si structures subjected to x‐ray irradiation in the presence and absence of applied electric field has been studied as a function of accumulated dose. High temperature annealing of sandwiches involving thermally grown oxide results in a softening of the radiation response, evidence for both hole and electron trapping is found. Similar behavior is found in buried oxide layers produced by O⁺ implantation, then subjected to high temperature annealing. Evidence for majority hole trapping is found in unannealed, thermal oxide. It is suggested that high temperature annealing results in a reduction of the oxide which is driven by the Si/SiO₂ interface, resulting in electron and hole trap generation.