Comparative study of radiation-induced electrical and spin active defects in buried SiO2 layers

Abstract

The results of paramagnetic defect and positive fixed oxide charge creation in x‐irradiated buried SiO₂ formed by ion implantation and annealing are presented. Charged oxygen‐vacancy centers are argued to be the source of spin active defects but not the primary source of fixed oxide charge. Hydrogenation or fluorination of the oxide enhances the radiation sensitivity for creation of spin active defects but not of trapped positive charge. Annealing of the spin active defects may proceed by a mechanism similar to that involved in charged defect annealing or by the trapping of thermally detrapped, diffusing electrons. Annealing does not involve the trapping of diffusing molecular species as is usual in bulk oxides.