Device structures on porous silicon studied by scanning electron microscopy in the electron-beam current mode
- 1 July 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (1), 574-578
- https://doi.org/10.1063/1.362827
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Light-emitting porous silicon diode with an increased electroluminescence quantum efficiencyApplied Physics Letters, 1993
- Visible light emission from heavily doped porous silicon homojunction pn diodesApplied Physics Letters, 1993
- Electroluminescent performance of porous siliconThin Solid Films, 1992
- Highly sensitive photodetector using porous siliconApplied Physics Letters, 1992
- Photovoltaic response in electrochemically prepared photoluminescent porous siliconSolar Energy Materials and Solar Cells, 1992
- Visible electroluminescence from porous silicon np heterojunction diodesApplied Physics Letters, 1992
- Visible Electroluminescence from P-Type Crystalline Silicon/Porous Silicon/N-Type Microcrystalline Silicon Carbon PN Junction DiodesJapanese Journal of Applied Physics, 1992
- Visible electroluminescence from porous siliconApplied Physics Letters, 1992
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990