AlGaN layers grown on GaN using strain-relief interlayers
- 17 December 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (26), 4961-4963
- https://doi.org/10.1063/1.1531219
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain managementApplied Physics Letters, 2002
- Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wellsApplied Physics Letters, 2001
- Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum WellsJapanese Journal of Applied Physics, 2001
- Growth of crack-free AlGaN film on high-temperature thin AlN interlayerJournal of Crystal Growth, 2001
- Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet regionApplied Physics Letters, 2001
- Nearly strain-free AlGaN on (0001) sapphire: X-ray measurements and a new crystallographic growth modelJournal of Crystal Growth, 2000
- Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applicationsJournal of Applied Physics, 1999
- GaN: Processing, defects, and devicesJournal of Applied Physics, 1999
- Growth and applications of Group III-nitridesJournal of Physics D: Applied Physics, 1998
- MOVPE growth and characterization of AlxGa1-xNMaterials Science and Engineering B, 1997