Interdigitated Back Passivated Contact (IBPC) Solar Cells Formed by Ion Implantation
- 15 October 2015
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Photovoltaics
- Vol. 6 (1), 41-47
- https://doi.org/10.1109/jphotov.2015.2483364
Abstract
We describe work toward an interdigitated back passivated contact (IBPC) solar cell formed by patterned ionimplanted passivated contacts. Formation of electron and hole passivated contacts to n-type Cz wafers using a thin SiO 2 layer and ion-implanted amorphous silicon (a-Si) is described. P and B were ion implanted into intrinsic a-Si films, forming symmetric and IBPC test structures. The recombination parameter J 0 , as measured by a Sinton lifetime tester after thermal annealing, was J 0 ~ 2.4 fA/cm 2 for Si:P and J 0 ~ 10 fA/cm 2 for Si:B contacts. The contact resistivity for the passivated contacts was found to be 0.46 Ω·cm 2 for the n-type contact and 0.04 Ω·cm 2 for the p-type contact. The IBPC solar cell test structure gave 1-sun V oc values of 682 mV and pFF = 80%. The benefits of the ion-implanted IBPC cell structure are discussed.Keywords
Funding Information
- U.S. Department of Energy (DE-AC36-08-GO28308)
- National Renewable Energy Laboratory
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