A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier
- 11 June 2010
- journal article
- research article
- Published by Cambridge University Press (CUP) in International Journal of Microwave and Wireless Technologies
- Vol. 2 (3-4), 317-324
- https://doi.org/10.1017/s1759078710000395
Abstract
This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that −42 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, −47 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).Keywords
This publication has 18 references indexed in Scilit:
- Design and implementation of an inverse class-F power amplifier with 79 % efficiency by using a switch-based active device modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- A GaN HEMT Class F Amplifier at 2 GHz With $>\,$80% PAEIEEE Journal of Solid-State Circuits, 2007
- Study and Design Optimization of Multiharmonic Transmission-Line Load Networks for Class-E and Class-F $K$-Band MMIC Power AmplifiersIEEE Transactions on Microwave Theory and Techniques, 2007
- Lumped-element load-network design for class-E power amplifiersIEEE Transactions on Microwave Theory and Techniques, 2006
- Analysis and experiments for high-efficiency class-F and inverse class-F power amplifiersIEEE Transactions on Microwave Theory and Techniques, 2006
- Linearity characteristics of microwave-power GaN HEMTsIEEE Transactions on Microwave Theory and Techniques, 2003
- Class-E, Class-C, and Class-F power amplifiers based upon a finite number of harmonicsIEEE Transactions on Microwave Theory and Techniques, 2001
- Digital predistortion of wideband signals based on power amplifier model with memoryElectronics Letters, 2001
- Class-F power amplifiers with maximally flat waveformsIEEE Transactions on Microwave Theory and Techniques, 1997
- Stability and Power-Gain Invariants of Linear TwoportsIRE Transactions on Circuit Theory, 1962