Design and implementation of an inverse class-F power amplifier with 79 % efficiency by using a switch-based active device model
- 1 January 2008
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 21642958,p. 423-426
- https://doi.org/10.1109/rws.2008.4463519
Abstract
This paper presents the design and implementation of an inverse class-F power amplifier using a commercially available GaN 2 W power transistor. A switch-based model for this transistor was implemented in ADS and used to design this high efficiency amplifier. Simulation results with the developed model show drain efficiency of 79%, more than 19 dB of large-signal gain for an output power of greater than 5 W at 1 GHz. These values are confirmed by measurements, showing the usefulness of the switch-based active device model for this type of switching-mode power amplifiers.Keywords
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