Threshold field of phase change memory materials measured using phase change bridge devices
- 24 August 2009
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 95 (8), 082101
- https://doi.org/10.1063/1.3210792
Abstract
The threshold switching effect of phase change memory devices is typically parameterized by the threshold voltage at which this breakdown occurs. Using phase change memory bridge devices of variable length, we prove unambiguously that the important parameter for threshold switching is a critical electrical field and not a threshold voltage. By switching phase change bridge devices from the amorphous-as-deposited state, we obtain threshold fields for , Ag- and In-doped , , and 4 nm thick Sb devices of 8.1, 19, 56, and , respectively.
Keywords
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