Electronic Switching in Phase-Change Memories
- 26 February 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 51 (3), 452-459
- https://doi.org/10.1109/ted.2003.823243
Abstract
A detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented. An original bandgap model consistent with the microscopic structure of both crystalline and amorphous chalcogenide is described, and a physical picture of the switching mechanism is proposed. Numerical simulations provide, for the first time, a quantitative description of the peculiar current-voltage curve of a Ge/sub 2/Sb/sub 2/Te/sub 5/ resistor, in good agreement with measurements performed on test devices.Keywords
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