Ten-Nanometer Resolution Nanolithography using Newly Developed 50-kV Electron Beam Direct Writing System
- 1 November 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (11S)
- https://doi.org/10.1143/jjap.30.3266
Abstract
A high energy 50-kV electron beam direct writing system which has a gas introduction line has been developed. Several aspects of the performance of this system are demonstrated. The electron beam size has been improved to be less than 5 nm. 10-nm width line patterns with 50-nm periods in PMMA resist on a thick Si substrate are demonstrated. It is observed that fewer proximity effects occur when a high-energy electron beam is used. 20-nm-width lines and 20-nm-diameter Au-Pd metal patterns have been fabricated by a lift-off method. 14-nm-diameter carbon dot patterns were deposited on a Si substrate by electron-beam-induced deposition using Styrene gas.Keywords
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