A Contact-Resistive Random-Access-Memory-Based True Random Number Generator
- 20 June 2012
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 33 (8), 1108-1110
- https://doi.org/10.1109/led.2012.2199734
Abstract
A new type of true random number generator, based on the random telegraph noise of a contact-resistive random access memory device, is proposed in this letter. The random-number generator consists of only a simple bias circuit plus a comparator, leading to small circuit area and low power consumption. By realizing this generator by the 65-nm complementary metal-oxide-semiconductor logic process, the occupied area can be as low as 45 μm2, demonstrating substantial saving in the circuit area.Keywords
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