BaTiO3 Integration with Nanostructured Epitaxial (100), (110), and (111) Germanium for Multifunctional Devices

Abstract

Ferroelectric–germanium heterostructures have a strong potential for multifunctional devices. Germanium (Ge) is attractive due to its higher electron and hole mobilities while ferroelectric BaTiO₃ is promising due to its high relative permittivity, which can make next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. Here, we investigate the growth, structural, chemical, and band alignment properties of pulsed laser deposited BaTiO₃ on epitaxial (100)Ge, (110)Ge, and (111)Ge layers. Cross-sectional transmission electron microscopy micrographs show the amorphous nature of the BaTiO₃ layer and also show a sharp heterointerface between BaTiO₃ and Ge. The appearance of strong Pendellösung oscillation fringes from high-resolution X-ray diffraction implies the presence of parallel and sharp heterointerfaces. The valence band offset relation of ΔE_V(100) ≥ ΔE_V(111) > ΔE_V(110) and the conduction band offset relation of ΔE_C(110) > ΔE_C(111) ≥ ΔE_C(100) on crystallographically oriented Ge offer significant advancement for designing new-generation ferroelectric–germanium-based multifunctional devices.