Interface polarization coupling in piezoelectric-semiconductor ferroelectric heterostructures
- 5 May 2010
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 81 (19)
- https://doi.org/10.1103/physrevb.81.195307
Abstract
We present a dielectric continuum model approach for studying the electrical polarization properties of interface polarization coupled , , and thin-film structures consisting of several hundred nanometer thick layers. Our model augments the effects of electric field driven switchable polarization and depletion layer formation with spontaneous interface polarization coupling. Wurtzite-structure (piezoelectric) -type ZnO and perovskite-structure (ferroelectric) highly insulating layers were prepared and investigated. The coupling between the nonswitchable spontaneous polarization of ZnO and the electrically switchable spontaneous polarization of causes strong asymmetric polarization hysteresis behavior. The -type ZnO reveals hysteresis-dependent capacitance variations upon formation of depletion layers at the ZnO/BTO interfaces. We obtain a very good agreement between our model generated data and our experiment. Our model approach allows for derivation of the amount and orientation of the spontaneous polarization of the piezoelectric constituents and can be generalized toward multiple-layer piezoelectric-semiconductor ferroelectric heterostructures. We identify interface polarization coupled triple-layer ZnO-BTO-ZnO heterostructures as two-terminal unipolar ferroelectric Bi-junction transistor for use in memory storage. DOI: http://dx.doi.org/10.1103/PhysRevB.81.195307 © 2010 The American Physical Society
Keywords
This publication has 70 references indexed in Scilit:
- Simulation of polarization and butterfly hysteresis loops in bismuth layer-structured ferroelectric thin filmsJournal of Applied Physics, 2006
- Theoretical description of ferroelectric and pyroelectric hystereses in the disordered ferroelectric-semiconductor filmsJournal of Applied Physics, 2006
- Modeling saturated and unsaturated ferroelectric hysteresis loops: An analytical approachJournal of Applied Physics, 2005
- Modeling of anomalous hysteresis behavior of compositionally graded ferroelectric films at low fieldsJournal of Applied Physics, 2005
- A possible mechanism of anomalous shift and asymmetric hysteresis behavior of ferroelectric thin filmsApplied Physics Letters, 2005
- Asymmetrical leakage currents as a possible origin of the polarization offsets observed in compositionally graded ferroelectric filmsJournal of Applied Physics, 2003
- Graded ferroelectric thin films: Possible origin of the shift along the polarization axisApplied Physics Letters, 2002
- Vertical drift of P–E hysteresis loop in asymmetric ferroelectric capacitorsJournal of Applied Physics, 1996
- Modeling ferroelectric capacitor switching with asymmetric nonperiodic input signals and arbitrary initial conditionsJournal of Applied Physics, 1991
- Device modeling of ferroelectric capacitorsJournal of Applied Physics, 1990