Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate
- 3 August 2015
- journal article
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 9 (8), 466-469
- https://doi.org/10.1002/pssr.201510229
Abstract
No abstract availableKeywords
Funding Information
- National Basic Research Program of China (2013CB932900, 2011CB922100)
- NSFC (61205057, 61204050)
- NSFJS (BK2011011, BK20130055)
- China Scholarship Council
This publication has 30 references indexed in Scilit:
- Modulation Doping of GaAs/AlGaAs Core–Shell Nanowires With Effective Defect Passivation and High Electron MobilityNano Letters, 2015
- In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) SubstratesNano Letters, 2014
- Radial modulation doping in core–shell nanowiresNature Nanotechnology, 2014
- Ferromagnetic (Mn, N)-codoped ZnO nanopillars array: Experimental and computational insightsApplied Physics Letters, 2014
- Nanoelectronics-biology frontier: From nanoscopic probes for action potential recording in live cells to three-dimensional cyborg tissuesNano Today, 2013
- Colossal injection of catalyst atoms into silicon nanowiresNature, 2013
- InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics LimitScience, 2013
- Design and Synthesis of Diverse Functional Kinked Nanowire Structures for Nanoelectronic BioprobesNano Letters, 2013
- Boron distribution in the core of Si nanowire grown by chemical vapor depositionJournal of Applied Physics, 2012
- Nanowire electronic and optoelectronic devicesMaterials Today, 2006