In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates
- 30 October 2014
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 14 (11), 6469-6474
- https://doi.org/10.1021/nl503001g
Abstract
Growing self-assembled silicon nanowires (SiNWs) into precise locations represents a critical capability to scale up SiNW-based functionalities. We here report a novel epitaxy growth phenomenon and strategy to fabricate orderly arrays of self-aligned in-plane SiNWs on Si(100) substrates following exactly the underlying crystallographic orientations. We observe also a rich set of distinctive growth dynamics/modes that lead to remarkably different morphologies of epitaxially grown SiNWs/or grains under variant growth balance conditions. High-resolution transmission electron microscopy cross-section analysis confirms a coherent epitaxy (or partial epitaxy) interface between the in-plane SiNWs and the Si(100) substrate, while conductive atomic force microscopy characterization reveals that electrically rectifying p-n junctions are formed between the p-type doped in-plane SiNWs and the n-type c-Si(100) substrate. This in-plane epitaxy growth could provide an effective means to define nanoscale junction and doping profiles, providing a basis for exploring novel nanoelectronics.Keywords
Funding Information
- Ministry of Science and Technology of the People's Republic of China (2010CB934402, 2013CB632101, 2013CB932900, 2014CB921101)
- National Natural Science Foundation of China (11274155, 61204050)
- Total
- Natural Science Foundation of Jiangsu Province (BK20130573)
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