High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment
- 17 January 2017
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 38 (3), 303-305
- https://doi.org/10.1109/led.2017.2654485
Abstract
We developed an Al2O3/HfO2 bi-layer gate dielectric with an in-situ O3 treatment for interface state density (Dit) and gate leakage current density (Jg) reductions on SiGe channels. We observed Ge-content dependent equivalent oxide thickness (EOT) scaling and EOT 0.44 nm was achieved with an MOS capacitor with a Si0.05Ge0.95 substrate. The O3 treatment enabled application to non-planar device structures and we demonstrated five orders of magnitude lower off currents (Ioff), a sub-threshold slope of 68 mV/decade, and a very high hole mobility of 457 cm2V-1s-1 at an inversion carrier density (Ninv) of 1×1013 cm-2 for asymmetrically strained SiGe PMOSFETs with Ge% of 65%-70%.Keywords
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