Uniform hot-wall MOCVD epitaxial growth of 2inch AlGaN/GaN HEMT structures
- 1 March 2007
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 300 (1), 100-103
- https://doi.org/10.1016/j.jcrysgro.2006.10.242
Abstract
No abstract availableKeywords
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