Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs
- 1 August 2015
- journal article
- Published by Elsevier BV in Microelectronics Reliability
- Vol. 55 (9-10), 1719-1723
- https://doi.org/10.1016/j.microrel.2015.06.070
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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