Heteroepitaxial growth by Van der Waals interaction in one-, two- and three-dimensional materials
- 2 May 1991
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 111 (1-4), 1029-1032
- https://doi.org/10.1016/0022-0248(91)91126-u
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 12 references indexed in Scilit:
- van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2Journal of Applied Physics, 1990
- Heteroepitaxial growth of layered transition metal dichalcogenides on sulfur-terminated GaAs{111} surfacesApplied Physics Letters, 1990
- Heteroepitaxy of a two-dimensional material on a three-dimensional materialApplied Surface Science, 1990
- Epitaxial growth of transition metal dichalcogenides on cleaved faces of micaJournal of Vacuum Science & Technology A, 1990
- Studies on an (NH4)2Sx-Treated GaAs Surface Using AES, LEELS and RHEEDJapanese Journal of Applied Physics, 1989
- Application of Van der Waals epitaxy to highly heterogeneous systemsJournal of Crystal Growth, 1989
- Adsorption of Oxygen on Electron-Bombarded CaF2(111) SurfacesJapanese Journal of Applied Physics, 1989
- Antiferromagnetic Ordering in GdBa2Cu3Oy SuperconductorJapanese Journal of Applied Physics, 1987
- Ultrasharp interfaces grown with Van der Waals epitaxySurface Science, 1986
- Summary Abstract: Fabrication of ultrathin heterostructures with van der Waals epitaxyJournal of Vacuum Science & Technology B, 1985