High-detectivity D*=1.0×1010 cm √H̄z̄/W GaAs/AlGaAs multiquantum well λ=8.3 μm infrared detector
- 25 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (4), 296-298
- https://doi.org/10.1063/1.99918
Abstract
We report the first high-detectivity (D*=1.0×1010 cm (Hz)1/2/W), high-responsivity (Rv =30 000 V/W) GaAs/AlxGa1−xAs multiquantum well detector, sensitive in the long-wavelength infrared band at λ=8.3 μm (operating at a temperature of T= 77 K). Because of the mature GaAs growth and processing technologies as well as the potential for monolithic integration with high-speed GaAs field-effect transistors, large focal plane arrays of these detectors should be possible.Keywords
This publication has 17 references indexed in Scilit:
- Intersubband relaxation in GaAs-As quantum well structures observed directly by an infrared bleaching techniquePhysical Review Letters, 1987
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityApplied Physics Letters, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987
- Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domainPhysical Review B, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- Layer intermixing in HgTe-CdTe superlatticesApplied Physics Letters, 1986
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- New mode of IR detection using quantum wellsApplied Physics Letters, 1984
- A new infrared detector using electron emission from multiple quantum wellsJournal of Vacuum Science & Technology B, 1983