Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
- 22 December 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 30 (2), 103-106
- https://doi.org/10.1109/led.2008.2010340
Abstract
Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AlN-NL to a hot-wall MOCVD-grown AlN-NL reduces NL TBR by 25%, resulting in ~10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices.Keywords
This publication has 18 references indexed in Scilit:
- Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structuresJournal of Crystal Growth, 2009
- Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic DevicesIEEE Electron Device Letters, 2008
- High-power and high-efficiency GaN HEMT amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Uniform hot-wall MOCVD epitaxial growth of 2inch AlGaN/GaN HEMT structuresJournal of Crystal Growth, 2007
- Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman SpectroscopyIEEE Electron Device Letters, 2007
- Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structuresIEEE Transactions on Electron Devices, 2006
- Thermal mapping of defects in AlGaN∕GaN heterostructure field-effect transistors using micro-Raman spectroscopyApplied Physics Letters, 2005
- Micro-Raman Temperature Measurements for Electric Field Assessment in Active AlGaN–GaN HFETsIEEE Electron Device Letters, 2004
- Optical pump-and-probe measurement of the thermal conductivity of nitride thin filmsJournal of Applied Physics, 2002
- Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopyIEEE Electron Device Letters, 2002