A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current
- 1 April 2015
- journal article
- Published by Elsevier BV in Superlattices and Microstructures
- Vol. 80, 111-117
- https://doi.org/10.1016/j.spmi.2015.01.006
Abstract
No abstract availableFunding Information
- National Natural Science Foundation of China (61377020, 61376089, 61223005, 61176126)
- National Science Fund for Distinguished Young Scholars (60925017)
This publication has 19 references indexed in Scilit:
- Experimental investigation of factors limiting slow axis beam quality in 9xx nm high power broad area diode lasersJournal of Applied Physics, 2014
- Cycled Thermomechanical Failure in 808-nm High-Power AlGaAs/GaAs Laser Diode BarsIEEE Transactions on Electron Devices, 2014
- Working Thermal Stresses in AlGaAs/GaAs High-Power Laser Diode Bars Using Infrared ThermographyIEEE Transactions on Device and Materials Reliability, 2013
- On the importance of non-thermal far-field blooming in broad-area high-power laser diodesApplied Physics Letters, 2013
- High-power 850–870-nm pulsed lasers based on heterostructures with narrow and wide waveguidesQuantum Electronics, 2013
- 830-nm AlGaAs-InGaAs Graded Index Double Barrier Separate Confinement Heterostructures Laser Diodes With Improved Temperature and Divergence CharacteristicsIEEE Journal of Quantum Electronics, 2012
- High-Performance 980-nm Ridge Waveguide Lasers With a Nearly Circular BeamIEEE Photonics Technology Letters, 2004
- Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold currentJournal of Applied Physics, 1998
- Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structureIEEE Photonics Technology Letters, 1996
- Depressed index cladding graded barrier separate confinement single quantum well heterostructure laserApplied Physics Letters, 1991