On the importance of non-thermal far-field blooming in broad-area high-power laser diodes
- 3 June 2013
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 102 (22)
- https://doi.org/10.1063/1.4809835
Abstract
High-power broad-area laser diodes often suffer from a widening of the slow-axis far-field with increasing current (lateral far-field blooming). This effect is commonly attributed to self-heating. Utilizing self-consistent electro-thermal-optical simulations, we analyze previous experimental investigations of 970 nm broad-area GaAs-based Fabry-Perot lasers and reproduce the blooming mechanism in good agreement with the measurements. The simulations reveal that a substantial part of the far field blooming is not caused by self-heating but by increasing carrier and gain non-uniformity in the quantum wells.Keywords
This publication has 11 references indexed in Scilit:
- Inverse Thermal Lens Effects on the Far-Field Blooming of Broad Area Laser DiodesIEEE Photonics Technology Letters, 2013
- Experimental and theoretical analysis of the dominant lateral waveguiding mechanism in 975 nm high power broad area diode lasersSemiconductor Science and Technology, 2012
- Thermo-optical simulation of high-power diode lasersPublished by SPIE-Intl Soc Optical Eng ,2012
- Structure, Stability, and Spectra of Lateral Modes of a Broad-Area Semiconductor LaserIEEE Journal of Quantum Electronics, 2007
- Design of wide-emitter single-mode laser diodesIEEE Journal of Quantum Electronics, 2005
- Nonlinear properties of tapered laser cavitiesIEEE Journal of Selected Topics in Quantum Electronics, 2003
- The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modelingJournal of Applied Physics, 2000
- Distributed Feedback Semiconductor LasersPublished by Institution of Engineering and Technology (IET) ,1998
- Lateral modes of broad area semiconductor lasers: theory and experimentIEEE Journal of Quantum Electronics, 1991
- Comprehensive modeling of diode arrays and broad-area devices with applications to lateral index tailoringIEEE Journal of Quantum Electronics, 1988