Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
- 7 January 2011
- journal article
- research article
- Published by Wiley in Advanced Materials
- Vol. 23 (7), 878-882
- https://doi.org/10.1002/adma.201003993
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Graphene transistorsNature Nanotechnology, 2010
- Towards a quantum resistance standard based on epitaxial grapheneNature Nanotechnology, 2010
- Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene TransistorsNano Letters, 2009
- Graphene: Status and ProspectsScience, 2009
- Operation of Graphene Transistors at Gigahertz FrequenciesNano Letters, 2009
- The electronic properties of grapheneReviews of Modern Physics, 2009
- Gate-induced insulating state in bilayer graphene devicesNature Materials, 2007
- Asymmetry gap in the electronic band structure of bilayer graphenePhysical Review B, 2006
- Landau-Level Degeneracy and Quantum Hall Effect in a Graphite BilayerPhysical Review Letters, 2006
- Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520Japanese Journal of Applied Physics, 1992