Hot-electron effects on channel thermal noise in fine-line NMOS field-effect transistors

1 September 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 33 (9), 1395-1397
https://doi.org/10.1109/t-ed.1986.22680

Abstract

Submicrometer NMOSFET's exhibit excess channel thermal noise. This excess noise increases with an increase in drain-to-source voltage and a decrease in channel length. A strong correlation between high electric field and excess noise strongly suggests hot electrons as being responsible for this excess noise.

Keywords

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