Noise associated with substrate current in fine-line NMOS field-effect transistors
- 1 June 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (6), 1047-1052
- https://doi.org/10.1109/t-ed.1985.22072
Abstract
The noise manifested by impact-ionization-generated substrate current in fine-line NMOS transistors is studied. It is found that this noise can be considerably above the shot noise level for high drain voltages. The magnitude of this noise is interpreted in terms of an avalanche gain produced by a multistep impact-ionization process involving both holes and electrons. The device structure imposes one positive and one negative feedback loop and exhibits a peak in the noise as a function of the drain voltage.Keywords
This publication has 9 references indexed in Scilit:
- IVB-7 an impact ionization model for 2D device simulationIEEE Transactions on Electron Devices, 1984
- Applications of scaling to problems in high-field electronic transportJournal of Applied Physics, 1981
- Characterization of two step impact ionization and its influence in NMOS and PMOS VLSI'sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1980
- Theory of carrier multiplication and noise in avalanche devices—Part II: Two-carrier processesIEEE Transactions on Electron Devices, 1979
- Noise associated with JFET gate current resulting from avalanching in the channelSolid-State Electronics, 1978
- Investigation of the transition from tunneling to impact ionization multiplication in silicon p-n junctionsSolid-State Electronics, 1976
- Electron Scattering by Pair Production in SiliconPhysical Review B, 1967
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966
- Homophase and heterophase fluctuations in semiconducting crystalsDiscussions of the Faraday Society, 1959