HgTe/HgCdTe superlattices grown on CdTe/Si by molecular beam epitaxy for infrared detection
- 1 June 2004
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Electronic Materials
- Vol. 33 (6), 503-508
- https://doi.org/10.1007/s11664-004-0038-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Far-infrared detector based on HgTe/HgCdTe superlatticesJournal of Electronic Materials, 2003
- Extrinsic p-type doping and analysis of HgCdTe grown by molecular beam epitaxyPublished by SPIE-Intl Soc Optical Eng ,2002
- Band structure and its temperature dependence for type-III superlattices and their semimetal constituentPhysical Review B, 2000
- Calculation of intrinsic carrier concentration in Hg1−xCdxTeJournal of Applied Physics, 1983
- The CdTe/HgTe superlattice: Proposal for a new infrared materialApplied Physics Letters, 1979