227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density
- 9 May 2008
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 1, 051101
- https://doi.org/10.1143/apex.1.051101
Abstract
No abstract availableKeywords
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