Detection of localized UIS failure on IGBTs with the aid of lock-in thermography
- 15 August 2008
- journal article
- Published by Elsevier BV in Microelectronics Reliability
- Vol. 48 (8-9), 1432-1434
- https://doi.org/10.1016/j.microrel.2008.06.042
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cellMicroelectronics Reliability, 2007
- Localization of weak heat sources in electronic devices using highly sensitive lock-in thermographyMaterials Science and Engineering B, 2002
- Lock-in contact thermography investigation of lateral electronic inhomogeneities in semiconductor devicesSensors and Actuators A: Physical, 1998