Terascale integration via a redesign of the crossbar based on a vertical arrangement of poly-Si nanowires
- 23 August 2010
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Resistive non-volatile memory devices (Invited Paper)Microelectronic Engineering, 2009
- Nanoscale DevicesPublished by Springer Science and Business Media LLC ,2009
- Molecular electronics in silicoApplied Physics A, 2008
- Label-free immunodetection with CMOS-compatible semiconducting nanowiresNature, 2007
- Nanowire Sensors for Medicine and The Life SciencesNanomedicine, 2006
- Systems Biology and New Technologies Enable Predictive and Preventative MedicineScience, 2004
- Nanoscale molecular-switch crossbar circuitsNanotechnology, 2003
- Toward a Hybrid Micro-nanoelectronicsJournal of Nanoparticle Research, 2002
- A Defect-Tolerant Computer Architecture: Opportunities for NanotechnologyScience, 1998
- Three-dimensional interconnect technology for ultra-compact MMICsSolid-State Electronics, 1997