Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process
- 7 October 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 31 (12), 1359-1361
- https://doi.org/10.1109/led.2010.2072770
Abstract
We report the enhanced performance of Ge nanowire (NW) tunneling field-effect transistors (TFETs), realized using a millisecond flash-assisted rapid thermal process (fRTP) for dopant activation. The electrical characteristics of our fRTP-activated NW TFETs exhibit maximum drive currents up to I max ~ 28 μA/μm at V dd = -3 V and improved subthreshold swings. By comparison, NW TFETs realized using conventional RTP for dopant activation show an order of magnitude lower current. We attribute these findings to a more abrupt doping profile at the tunnel junction, owing to reduced dopant diffusion and improved dopant activation.Keywords
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