Structures and Energetics of Indium-Catalyzed Silicon Nanowires

Abstract

Strong size dependent structures of Si nanowires, grown via indium nanoparticles, have been revealed by high-resolution transmission electron microscopy studies. It is found that, below the critical value of particle diameter of ∼100 nm, the growth changes from ⟨111⟩ to predominantly ⟨211⟩ direction and the formation of multiple {111} twins changes from perpendicular to the ⟨111⟩ growth direction to parallel to the ⟨211⟩ axial direction. The growth mechanisms are discussed in terms of relative surface/interface energy, using Au catalyzed Si nanowires as a comparative benchmark.