Synergetic nanowire growth

Abstract

Interest in nanowires continues to grow because they hold the promise of monolithic integration of high-performance semiconductors with new functionality^1,2,3,4,5 into existing silicon technology^6,7,8. Most nanowires are grown using vapour–liquid–solid growth⁹, and despite many years of study this growth mechanism remains under lively debate. In particular, the role of the metal particle is unclear^10,11,12. For instance, contradictory results have been reported on the effect of particle size on nanowire growth rate^{13,14,15,<a data-track="click"...}