High-field transport in two-dimensional graphene

Abstract

Transport of carriers in two-dimensional graphene at high electric fields is investigated by combining semianalytical and Monte Carlo methods. A semianalytical high-field transport model based on the high rate of optical phonon emission provides useful estimates of the saturation currents in graphene. For developing a more accurate picture, the nonequilibrium (hot) phonon effect and the role of electron-electron scattering were studied using Monte Carlo simulations. Monte Carlo simulations indicate that the hot phonon effect plays a dominant role in current saturation, and electron-electron scattering strongly thermalizes the hot carrier population in graphene. We also find that electron-electron scattering removes negative differential resistance in graphene. Transient phenomenon such as velocity overshoot can be used to speed up graphene-based high-speed electronic devices by shrinking the channel length below 80 nm if electrostatic control can be exercised in the absence of a band gap.